page 1 PS5G04S through-hole phototransistor/ 5 type recommended applications electric household appliances, oa/fa, pc/peripheral equipment, other general applications ? high photo current : 12.0ma typ. (v ce =5v,ee=1.0mw/cm 2 ) ? narrow distribution ? lead?free soldering compatible ? rohs compliant peak sensitivity wavelength 880nm product features die materials si 20 deg. features package 5 type, water clear epoxy soldering methods esd packing 2kv (hbm) bulk : 200pcs(min.) ttw (through the wave) soldering and manual soldering please refer to soldering conditions about soldering. half intensity angle 2009.3.23
page 2 2009.3.23 PS5G04S through-hole phototransistor/ 5 type absolute maximum ratings item symbol unit collector dissipation pc mw collector-emitter voltage v ceo v emitter-collector voltage v eco v collector current ic ma operating temperature t opr storage temperature t stg electro-optical characteristics min. 1.5 ma typ. 12 ma max. 24 ma response time tr/tf typ. 5/5 s dark current i ceo max. 0.2 a peak sensitivity wavelength p typ. 880 nm collector-emitter saturation voltage v ce(sat) typ. 0.1 v spatial half width S typ. 20 deg. 1 color temperature is 2,856k. employs a standard tungsten lamp. 30 -30 +85 -30 +100 absolute maximum ratings 75 30 5 photo current ic v ce =5v, ee=1mw/cm 2 1 conditions v ce =10v, ic=2ma, r l =100 v ceo =10v v ce =5v - ic=0.5ma, ee=10mw/cm 2 characteristics item unit symbol (ta=25 ) (ta=25 )
page 3 2009.3.23 PS5G04S through-hole phototransistor/ 5 type photo current rank (ta=25 ) please contact our sales staff concerning rank designation. min. max. a1.53.0 b2.44.8 c4.08.0 d 7.0 14.0 e 12.0 24.0 ic(ma) v ce = 5v ee = 1mw/cm 2 condition rank
page 4 2009.3.23 technical data spatial distribution example wavelength vs. relative sensitivity condition : ta = 25 , vce = 0v wavelength [nm] relative sensitivity (%) irradiance vs. relative photo current condition : ta = 25 , vce = 5v irradiance ee(mw/cm 2 ) relative photo current ic it is based on ee=1mw/cm 2 . employs a standard tungsten lamp of 2,856k. relative photo current (%) condition : ta = 25 PS5G04S through-hole phototransistor/ 5 type collector-emitter voltage vs. photo current condition : ta = 25 collector-emitter voltage v ce (v) photo current ic (ma) employs a standard tungsten lamp of 2,856k.
page 5 2009.3.23 technical data PS5G04S through-hole phototransistor/ 5 type response time measuring circuit ambient temperature vs. relative photo current condition : v ce =10v, ic=2ma, ta=25 tr -- -- -- -- -- -- tf load resistance : r l ( ) response time ( s) ambient temperature vs. collector dissipation ambient temperature : ta( ) ambient temperature vs. dark current condition : v ceo = 10v ambient temperature : ta( ) dark current : i ceo ( a) collector dissipation : pc(mw)
page 6 2009.3.23 technical data PS5G04S through-hole phototransistor/ 5 type ambient temperature vs. relative photo current condition : v ce = 5v ambient temperature : ta( ) relative photo current
package dimensions page 7 (unit: mm) 2009.3.23 PS5G04S through-hole phototransistor/ 5 type
PS5G04S page 8 through-hole phototransistor/ 5 type ttw (through the wave ) soldering conditions solder bath temp. dipping time 265 5 s (max.) (max.) position at least 3.0 mm away from the root of lead iron tip temp. soldering time and frequency 3 s 1 time 400 (max.) (max.) (max.) (30 w max.) position at least 3.0 mm away from the root of lead 2009.3.23 pre-heating 100 (max.) resin surface temperature 1) the dip soldering process shall be twice maximum. 2) the product shall be cooled to normal temperature before the second dipping process. the detail is described to led and photodet ector handling precautions of home page: "mounting through-hole type devices? and "soldering", and use it after the confirmation, please. manual soldering conditions the detail is described to led and photodet ector handling precautions of home page: "mounting through-hole type devices? and "soldering", and use it after the confirmation, please.
PS5G04S page 9 through-hole phototransistor/ 5 type reliability testing result failure criteria items symbols conditions failure criteria photo current i c e e value of each product irradiance of photo current v ce value of each product collector-emitter voltage of photo current testing max. value R initial value x 1.3 testing min. value Q initial value x 0.7 dark current i ceo v ceo value of each product collector-emitter voltage of dark current testing max. value R spec. max. value x 1.2 cosmetic appearance - - occurrence of notable decoloration, deformation and cracking reliability testing result applicable standard testing conditions duration failure room temp. operating life eiaj ed- 4701/100(101) ta = 25 , pc = maxium rated power dissipation 1,000 h 0/16 resistance to soldering heat eiaj ed- 4701/300(302) 265 5 , 3mm from package base 5s 0/16 temperature cycling eiaj ed- 4701/100(105) minimum rated storage temperature(30min) normal temperature(15min) maximum rated storage temperature(30min) normal temperature(15min) 5 cycles 0/16 wet high tem p. storage life eiaj ed- 4701/100(103) ta = 60 2 , rh = 90 5% 1,000 h 0/16 high temp. storage life eiaj ed- 4701/200(201) ta = maximum rated storage temperature 1,000 h 0/16 low temp. storage life eiaj ed- 4701/200(202) ta = minimum rated storage temperature 1,000 h 0/16 lead tension eiaj ed- 4701/400(401) 10n,1time ( 0.4 and flat package : 5n) 10s 0/16 vibration, variable frequency eiaj ed- 4701/400(403) 98.1m/s 2 (10g), 100 2khz sweep for 20min., xyz each direction 2 h 0/16 2009.3.23
special notice to customer s using the products and technical information shown in this data sheet PS5G04S page 10 through-hole phototransistor/ 5 type 1) the technical information shown in the data sheets are limited to the typical characteristics and circuit examples of the referenced products. it does not co nstitute the warranting of industrial property nor the granting of any license. 2) for the purpose of product improvement, the specif ications, characteristics and technical data described in the data sheets are subject to change without prior notice. therefore it is recommended that the most updated specifications be used in your design. 3) when using the products described in the data sh eets, please adhere to the ma ximum ratings for operating voltage, heat dissipation characteristics, and other precautions for use. we are not responsible for any damage which may occur if these specifications are exceeded. 4) the products that have been described to this cata log are manufactured so that they will be used for the electrical instrument of the benchmark (oa equipment, telecommunications equipment, av machine, home appliance and measur ing instrument). the application of aircrafts, space borne application, transportation equipment, medical equipment and nuclear power control equipment, etc. needs a high re liability and safety, and the breakdown and the wrong operation might influence the life or the human body. pl ease consult us beforehand if you plan to use our product for the usages of aircrafts, space borne appl ication, transportation equipment, medical equipment and nuclear power control equipment, etc. except oa equipment, telecommunications equipment, av machine, home appliance and measuring instrument. 5) in order to export the products or technologi es described in this data sheet which are under the ?foreign exchange and foreign trade control law,? it is necessary to first obtain an export permit from the japanese government. 6) no part of this data sheet may be reprinted or reproduced without prior written permission from stanley electric co., ltd. 7) the most updated edition of this data sheet can be obtained from the address below: http://www.stanley-components.com 2009.3.23
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